Infrared photo beam sensor G65

 Model explanation of Photoelectric Sensor

 1. G: Photoelectric sensor
 2. Sub code No.(18, 50, 76.....)
 3. Operating voltage(2: 90-250VAC ;3: 10-30VDC; 4: 12-240VDC/24-240VAC; 5: Special voltage)
 4. Detection method( A: Diffuse type; B: Mirror reflex type; C: Through beam type)
 5. Detection distance (05: 5cm ; 10: 10cm; 30: 30cm; 101: 10m)
 6. Output method(N: NPN transistor output; P: PNP transistor output; J: Relay output; L: AC two-line output; S: NPN+PNP)
 7. Output status(A: NO; B: NC; C: NO+NC)
 8. Auxi function code(T1: Front delay; T2: Rear delay; Y: Oil proof; T: With connector; I: Special requirement)

 Technical Parameters:

OVERALL DIMENSIONS
Diffuse type	Detection distance
	10-30VDC	NPN	NO
			NC
			NO+NC
		PNP	NO
	90-250VAC		NC
			NO+NC
		SCR Contro Hable silicon	NO
			NC
		Relay output
Retroreflective type	Detection distance
	10-30VDC	NPN	NO
			NC
			NO+NC
		PNP	NO
	90-250VAC		NC
			NO+NC
		SCR Contro Hable silicon	NO
			NC
		Relay output
Through beam	Detection distance			1cm
	10-30VDC	NPN	NO	G65-3E01NA
			NC	G65-3E01NB
			NO+NC	G65-3E01NC
		PNP	NO	G65-3E01PA
	90-250VAC		NC	G65-3E01PB
			NO+NC	G65-3E01PC
		SCR Contro Hable silicon	NO
			NC
		Relay output
DC/SCR Control output				DC:200mA,AC:300mA,Relay:2A
DC/AC Consumption current				DC<15mA,AC<10mA
DC/AC Response time				Dc<2ms,AC<20ms
Directional angle				3。-10。
Detected object				transparent or opaque body
Working environment temperature				-25℃～+55℃
Intensity of illumination of working environment				Sunlight under 1000LX incandescent lamp under 3000LX
Shell material				Plastic
Protection grade