G55
Winston/OEM
Made in China
Export standard carton box
PCS
10
3-7days
1
T/T
Model explanation of Photoelectric Sensor
1. G: Photoelectric sensor
2. Sub code No.(18, 50, 76.....)
3. Operating voltage(2: 90-250VAC ;3: 10-30VDC; 4: 12-240VDC/24-240VAC; 5: Special voltage)
4. Detection method( A: Diffuse type; B: Mirror reflex type; C: Through beam type)
5. Detection distance (05: 5cm ; 10: 10cm; 30: 30cm; 101: 10m)
6. Output method(N: NPN transistor output; P: PNP transistor output; J: Relay output; L: AC two-line output; S: NPN+PNP)
7. Output status(A: NO; B: NC; C: NO+NC)
8. Auxi function code(T1: Front delay; T2: Rear delay; Y: Oil proof; T: With connector; I: Special requirement)
Technical Parameters:
| OVERALL DIMENSIONS | | |||
| Diffuse type | Detection distance | 20cm | ||
| 10-30VDC | NPN | NO | G55-3A20NA | |
| NC | G55-3A20NB | |||
| NO+NC | G55-3A20NC | |||
| PNP | NO | G55-3A20PA | ||
| 90-250VAC | NC | G55-3A20PB | ||
| NO+NC | G55-3A20PC | |||
| SCR Contro Hable silicon | NO | |||
| NC | ||||
| Relay output | ||||
| Retroreflective type | Detection distance | 2m | ||
| 10-30VDC | NPN | NO | G55-3B2NA | |
| NC | G55-3B2NB | |||
| NO+NC | G55-3B2NC | |||
| PNP | NO | G55-3B2PA | ||
| 90-250VAC | NC | G55-3B2PB | ||
| NO+NC | G55-3B2PC | |||
| SCR Contro Hable silicon | NO | |||
| NC | ||||
| Relay output | ||||
| Through beam | Detection distance | 4m | ||
| 10-30VDC | NPN | NO | G55-3C4NA | |
| NC | G55-3C4NB | |||
| NO+NC | ||||
| PNP | NO | G55-3C4PA | ||
| 90-250VAC | NC | G55-3C4PB | ||
| NO+NC | ||||
| SCR Contro Hable silicon | NO | |||
| NC | ||||
| Relay output | ||||
| DC/SCR Control output | DC:200mA | |||
| DC/AC Consumption current | DC<15mA,AC<10mA | |||
| DC/AC Response time | AC/Dc<2ms | |||
| Directional angle | 3。-10。 | |||
| Detected object | transparent or opaque body | |||
| Working environment temperature | 25℃~+55℃ | |||
| Intensity of illumination of working environment | Sunlight under 1000LX incandescent lamp under 3000LX | |||
| Shell material | Metal | |||
| Protection grade | IP54 | |||
Model explanation of Photoelectric Sensor
1. G: Photoelectric sensor
2. Sub code No.(18, 50, 76.....)
3. Operating voltage(2: 90-250VAC ;3: 10-30VDC; 4: 12-240VDC/24-240VAC; 5: Special voltage)
4. Detection method( A: Diffuse type; B: Mirror reflex type; C: Through beam type)
5. Detection distance (05: 5cm ; 10: 10cm; 30: 30cm; 101: 10m)
6. Output method(N: NPN transistor output; P: PNP transistor output; J: Relay output; L: AC two-line output; S: NPN+PNP)
7. Output status(A: NO; B: NC; C: NO+NC)
8. Auxi function code(T1: Front delay; T2: Rear delay; Y: Oil proof; T: With connector; I: Special requirement)
Technical Parameters:
| OVERALL DIMENSIONS | | |||
| Diffuse type | Detection distance | 20cm | ||
| 10-30VDC | NPN | NO | G55-3A20NA | |
| NC | G55-3A20NB | |||
| NO+NC | G55-3A20NC | |||
| PNP | NO | G55-3A20PA | ||
| 90-250VAC | NC | G55-3A20PB | ||
| NO+NC | G55-3A20PC | |||
| SCR Contro Hable silicon | NO | |||
| NC | ||||
| Relay output | ||||
| Retroreflective type | Detection distance | 2m | ||
| 10-30VDC | NPN | NO | G55-3B2NA | |
| NC | G55-3B2NB | |||
| NO+NC | G55-3B2NC | |||
| PNP | NO | G55-3B2PA | ||
| 90-250VAC | NC | G55-3B2PB | ||
| NO+NC | G55-3B2PC | |||
| SCR Contro Hable silicon | NO | |||
| NC | ||||
| Relay output | ||||
| Through beam | Detection distance | 4m | ||
| 10-30VDC | NPN | NO | G55-3C4NA | |
| NC | G55-3C4NB | |||
| NO+NC | ||||
| PNP | NO | G55-3C4PA | ||
| 90-250VAC | NC | G55-3C4PB | ||
| NO+NC | ||||
| SCR Contro Hable silicon | NO | |||
| NC | ||||
| Relay output | ||||
| DC/SCR Control output | DC:200mA | |||
| DC/AC Consumption current | DC<15mA,AC<10mA | |||
| DC/AC Response time | AC/Dc<2ms | |||
| Directional angle | 3。-10。 | |||
| Detected object | transparent or opaque body | |||
| Working environment temperature | 25℃~+55℃ | |||
| Intensity of illumination of working environment | Sunlight under 1000LX incandescent lamp under 3000LX | |||
| Shell material | Metal | |||
| Protection grade | IP54 | |||